SK hynix Announces Latest NAND Flash Memory with 176 Layers
SK hynix Announces Latest NAND Flash Memory with 176 Layers

SK hynix Announces Latest NAND Flash Memory with 176 Layers

SK hynix recently announced the completion of NAND development flash memory most recently using 176 layers . Called SK hynix as 4D NAND flash memory with 176 layers or layers, for example from NAND flash memory it has been sent to various vendors that make NANDs flash memory controller in the world. The goal, of course, is that the final product such as an SSD that uses 4D NAND won’t be longflash memory with 176 layers from SK hynix it could be present in the world market. With more layers than before, NAND flash memory current from SK hynix claimed to offer a higher bit density. In other words, for the same cross-sectional area, 4D NAND flash memory with 176 layers from SK hynix can bring a higher capacity.

“The NAND flash industry strives to enhance multiple technologies for high integration and maximum productivity, both at the same time,” said Jung Dal Choi (Head of NAND Development atSK hynix). “SK hynix, as the pioneer of 4D NAND, will lead the NAND flash market with the highest productivity and technology in the industry, “he added.

Even though it carries the designation 4D NAND flash memory, NAND flash memory current from SK hynix actually resembles 3D NAND flash memory it’s just that the peripheral circuits that are usually located next to the memory cell rows are moved to the bottom of the memory cell rows. The approach that places the peripheral circuits under the memory cells is called PUC (Fairy. Under Cell). Other than that, SK hynix using CTF ( charge trap flash ) instead of FG ( floating gate ). SK hynix mentioning the use of the term 4D is to indicate the use of CTF and PUC in a NAND flash memory.

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Compared to 3D NAND flash memory which uses floating gate and peripheral circuits with conventional laying, SK hynix claim 4D NANDflash memory -it offers higher performance and better density. As 4D NANDflash memory third generation, SK hynix claim 4D NAND flash memory with 176 layers announced offering 35% higher bit productivity and 20% faster cell read rates, both over the previous generation.

SK hynix 4D NAND flash memory with 176 layers announced were TLC ( triple-level cells ) and had a capacity of 512 Gb.SK hynix plans to deliver a product with a capacity of 1 Tb based on 4D NAND flash memory with 176 layers that. As for the SSD that usesSK hynix 4D NAND flash memory with 176 layers will be present after useSK hynix 4D NAND flash memory with 176 corresponding layers on the smartphone . UseSK hynix 4D NAND flash memory with 176 layers on the smartphone alone is expected to occur in mid-2021.